Galup-Montoro Carlos, Cherem Schneider Marcio. MOSFET Modeling for circuit analysis and design

World Scientific, 2007. — 446 p. — ISBN13: 978-981-256-810-6; ISBN10: 981-256-810-7.This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.Foreword.

List of Selected Symbols.

Introduction.
MOS integrated circuits.
Compact MOSFET models for circuit analysis and design.
A brief history of compact MOS transistor models.The MOS Capacitor.
Equilibrium electron and hole concentrations.
The field effect in bulk semiconductors.
The ideal two-terminal MOS structure.
The three-terminal MOS structure with uniformly doped substrate.
Real C-V curves: Interface traps, polysilicon depletion, and quantum effects.The Long-Channel MOSFET: Theory and dc Equations.
A brief history of MOSFET theory.
MOSFET operation.
The Pao-Sah exact I-V model.
Compact surface potential MOSFET models.
Charge control compact model.
Comparison between models.
Design-oriented MOSFET model.The Real MOS Transistor: dc Models.
Effective mobility.
Velocity saturation.
Saturation charge and saturation voltage.
Channel length modulation.
Effect of source and drain resistances.
Ballistic transport.
Short and narrow channel effects.
Impact of small geometry effects on transistor model.
Benchmark tests for dc MOSFET models for circuit simulation.Stored Charges and Capacitive Coefficients.
Transient analysis of the MOS transistor.
Quasi-static charge-conserving model.
Charges and capacitances of the extrinsic transistor.
Small-dimension effects on charges and capacitances.Mismatch Modeling.Random mismatch in MOS transistors.
Consistent model for drain current fluctuation.
Number fluctuation mismatch model.
Specific current mismatch.
Mismatch model in terms of inversion level.
Experimental results and discussion.Noise in MOSFETs.
Sources of noise.
Noise modeling using the impedance field method.
Consistency of noise models.
Design-oriented noise models.
Small-dimension effects on MOSFET noise.High-Frequency Models.Non quasi-static operation of the MOSFET.
Non-quasi-static small-signal model.
The у-parameter model.
Channel segmentation.
Induced gate noise.Gate and Bulk Currents.
Gate tunneling current.
Bulk current.Advanced MOSFET Structures.Deep submicron planar MOS transistor structures.
Silicon-on-insulator (SOI) CMOS transistors.
Undoped surrounding-gate transistors.
Multiple-gate transistors.MOSFET Parameter Extraction.Threshold voltage and short-channel effects.
Specific current and effective channel length and width.
Slope factor and subthreshold slope.
Mobility degradation with transversal field.Advanced MOSFET Models for Circuit Simulators.
Surface potential- vs. inversion charge-based models.
Charge-based models.
Surface potential models.Appendixes.
Electrostatics in One Dimension.
Electrostatics in Semiconductors.
Drift-diffusion Current Model.
Continuity Equations Basics of pn Junctions.
Hall-Shockley-Read (HSR) Statistics.
Interface Trap Capacitance.