Springer International Publishing AG, 2018. — 341 p. — ISBN10: 3319690523.
This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.
An Introduction on Phase-Change Memories
Electrical Transport in Crystalline and Amorphous Chalcogenide
Thermal Model and Remarkable Temperature Effects on the Chalcogenide Alloy
Self-Consistent Numerical Model
PCM Main Reliability Features
Structure and Properties of Chalcogenide Materials for PCM
Material Engineering for PCM Device Optimization
The Scaling of Phase-Change Memory Materials and Devices
Phase-Change Memory Device Architecture