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Rabe K.M., Ahn C.H., Triscone J.-M. (Eds.) Physics of Ferroelectrics: A Modern Perspective

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Rabe K.M., Ahn C.H., Triscone J.-M. (Eds.) Physics of Ferroelectrics: A Modern Perspective
Springer, 2007. — 397 p. — (Topics in Applied Physics 105). — ISBN: 978-3-540-34590-9.
During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and of experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and onvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. In this book, we present the modern physics of ferroelectricity in oxides through a set of chapters on topics that collectively represent some of the key advances and innovations over the last thirty years.
Modern Physics of Ferroelectrics: Essential Background
Theory of Polarization: A Modern Approach
A Landau Primer for Ferroelectrics
First-Principles Studies of Ferroelectric Oxides
Analogies and Differences between Ferroelectrics and Ferromagnets
Growth and Novel Applications of Epitaxial Oxide Thin Films
Ferroelectric Size Effects
Nanoscale Studies of Domain Walls in Epitaxial Ferroelectric Thin Films
Appendixes
Landau Free-Energy Coefficients
Material–Substrate Combinations Tables C´eline Lichtensteiger and Matthew Dawber
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