Claeys C., Simoen E. Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact

Springer, 2018. – 464 p. – (Springer Series in Materials Science 270). – ISBN: 978-3-319-93924-7.
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.Basic Properties of Transition Metals in Semiconductors
Source of Metals in Si and Ge Crystal Growth and Processing
Characterization and Detection of Metals in Silicon and Germanium
Electrical Activity of Iron and Copper in Si, SiGe and Ge
Electrical Properties of Metals in Si and Ge
Impact of Metals on Silicon Devices and Circuits
Gettering and Passivation of Metals in Silicon and Germanium
Modeling of Metal Properties in Si, Si1−xGex and Ge