Noyes Publications, 1988. — 687 p. — ISBN: 0-8155-1150-7.
This handbook is a broad review of semiconductor materials and process technology, with emphasis on very large-scale integration (VLSI) and ultra large scale integration (ULSI). The technology of integrated circuit (IC) processing is expanding so rapidly that it can be difficult for the scientist working in one area to keep abreast of developments in other areas of the field. This handbook solves this problem by bringing together "snapshots" of the various aspects of the technology.
Readership: Materials scientists and engineers in the semiconductor field.
Silicon Materials Technology. Silicon Crystal Growth, Wafer Preparation, Material Properties, Process-Induced Defects, Oxygen in Silicon.
The Thermal Oxidation of Silicon and Other Semiconductor Materials. Silicon Thermal Oxidation Kinetics, Properties of Thermal Oxides, Process Variable/Oxidation Reaction Dependencies, Oxidation Mechanism, Other Oxidation Processes, Future Trends.
Chemical Vapor Deposition of Silicon and ITS Compounds. Epitaxial Deposition, HCI In Situ Etching, Gettering, Selective Deposition, CVD of Dielectric Films, X-Ray Lithography Mask Fabrication.
Chemical Etching and Slice Cleanup of Silicon. Orientation Dependent Cleaving of Silicon, Orientation Dependent Etching and Orientation Dependent Deposition, (110) Orientation Dependent Effects, Defect Delineation Etching, Slice Cleanup, Precleanup Solvent Rinse, Choline Cleanup Process.
Plasma Processing: Mechanisms and Applications. Fundamental Aspects, Plasma Etching, Plasma Deposition, Summary and Conclusions.
Physical Vapor Deposition. The Vacuum Environment, Evaporation, Molecular Beam Epitaxy, Sputtering, Thin Film Growth and Properties, Metallization of Semiconductor Devices.
Diffusion and Ion Implantation in Silicon. Continuum Theory, Atomic Theory of Diffusion, The Role of Point Defects in Silicon Processing, Diffusion in the Presence of Excess Point Defects, Characteristics of Silicon Self-Diffusion, Dopant Diffusion in Silicon, Design Considerations for Implanted-Diffused Layers, Ion Implantation.
Microlithography for VLSI. Forming the Resist Film, Generation of the Aerial Image for Electron Beam Mask Making, Interaction of Electrons with the Workpiece, Exposure and Development of Photoresist on Semiconductor Wafers, Formation of the Aerial Image in Projection Mask Aligners, Interaction of Ultra-Violet Light with Photoresist, Exposure and Development of Photoresist Films on Reflective Substrates, Emerging New Technologies.
Metallization for VLSI Interconnect and Packaging. Wiring Structure, Impact of Device Scaling, Electrical Characteristics, Material Reaction, Metallization Reliability.
Characterization of Semiconductor Materials. Surface Analysis Techniques, Imaging Analysis Techniques, Bulk Analysis Techniques.