2nd edition. — CRC Press, 2006. — 506 p. — 1574446746.
First introduced nearly a decade ago, the first edition of the Handbook of Semiconductor Interconnection Technology became widely popular for its thorough, integrated treatment of interconnect technologies and its forward-looking perspective. The field has grown tremendously in the interim and many of the "likely directions" outlined in the first edition are now standard in modern facilities. Thoroughly updated to reflect recent advances, this Second Edition examines the interconnect and fabrication technologies currently available along with the future prospects for the field.
What's New in the Second Edition?
Detailed discussion of electrochemical equipment for plating copper
Updated information on tools used for evaporation, chemical vapor deposition, and plasma processes
Emphasis on measurement of mechanical and thermal properties of insulators
Recently reported methods for characterizing porous dielectric thin films
Greater focus on integration issues and properties of titanium, cobalt, and nickel silicides
New process schemes based on the increased need for borderless contact gates and source/drain
Expanded discussion on recently reported choices for low-dielectric insulators
More emphasis on electroplated copper, especially morphology of plated films and their properties
Recent developments in thin film liners and barriers
Expanded material on copper reliability
The Handbook of Semiconductor Interconnection Technology, Second Edition offers comprehensive coverage of the practical aspects of interconnections for manufacturing.
Methods/Principles of Deposition and Etching of Thin Films
Characterization
Semiconductor Contact Technology
Interlevel Dielectrics
Metallization
Chip Integration
Reliability