Pearton S. (Ed.) GaN and ZnO-based Materials and Devices

Springer-Verlag Berlin, 2012 — 485 pages. — ISBN 978-3-642-23520-7.The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.The GaN materials system has applications in visible and UV light emitting devices and in high power, high temperature electronics. On the photonics side, the AlGaInN materials system, consisting of AlGaN/GaN, InAlN/GaN, and InGaN/GaN heterostructures and the GaN, AlN, and InN binaries, is widely used in blue/violet/white/UV light emitting diodes for stoplights and full color displays, blue and green lasers for use in high-density CD-ROM storage and high-resolution printers. The main applications for GaN-based high power microwave transistors are in phased array radar systems and wireless communication systems, while the low noise, radiation hard transistors can be used in high temperature sensors and spaceflight instrumentation. There have been many recent advances in this field, concerning sensors and nanostructure synthesis. Functional nanostructures are attracting much interest for use in sensing, energy harvesting and cell monitoring.Heteroepitaxy of Nonpolar and Semipolar GaN.
Qian Sun and Jung Han.
High-Quality Al-Rich AlGaN Alloys.
B.N. Pantha, J.Y. Lin, and H.X. Jiang.
Deep Ultraviolet Light-Emitting Diodes.
Michael Shur, Max Shatalov, Alex Dobrinsky, and Remis Gaska.
Green Nitride LEDs.
Xian-An Cao.
Improved Light Extraction Efficiency in GaN-Based Light Emitting Diodes.
Jihyun Kim.
GaN-Based Sensors.
F. Ren, B.H. Chu, K.H. Chen, C.Y. Chang, Victor Chen, and S.J. Pearton.
GaN HEMT Technology.
Wayne Johnson and Edwin L. Piner.
Recent Advances in High-Voltage GaN MOS-Gated Transistors for Power Electronics Applications.
T. Paul Chow and Z. Li.
Radiation Effects in GaN.
Alexander Y. Polyakov.
Recent Advances in GaN Nanowires: Surface-Controlled Conduction and Sensing Applications.
Ruei-San Chen, Abhijit Ganguly, Li-Chyong Chen, and Kuei-Hsien Chen.
Minority Carrier Transport in ZnO and Related Materials.
Elena Flitsyian, Zinovy Dashevsky, and Leonid Chernyak.
Conduction in Degenerately Doped Zn_(1-x)Al_xO Thin Films.
Michael Snure, David Toledo, Paul Slusser and Ashutosh Tiwari.
Multifunctional ZnO Nanostructure-Based Devices.
Yicheng Lu, Pavel I. Reyes, Jian Zhong, and Hannhong Chen.
ZnO/MgZnO Quantum Wells.
Jeffrey Davis and Chennupati Jagadish.
N-Type Oxide Semiconductor Thin-Film Transistors.
Pedro Barquinha, Rodrigo Martins, and Elvira Fortunato.
References. (To each chapter).